Silicon Carbide and Related Materials 2012 : selected, peer reviewed papers from the 9th European Conference on Selicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federanion. Vol. 740-742

This volume is the proceedings of the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012). The conference was held in Saint-Petersburg (Saint-Petersburg Hotel), Russia, on September 2nd — September 6th, following the successful preceding meetings in Crete, Montpellier, Kloster Banz, Linkoping, Bologna, Newcastle upon Tyne, Barcelona, and Oslo. ECSCRM is truly interdisciplinary and acts as an international forum for exchange of ideas and opinions on recent scientific and technical issues among researchers and engineers in academic, industrial and public sectors. The editions of ECSCRM have developed over the years and, today, ECSCRM is the leading European conference in the field of 'SiC and related materials and their applications'. The conference had more than 500 participants from 28 countries; 51% from Europe, 27% from Japan, 10% from the United States and 12% from the rest of the world, with South-Korea, China, Taiwan and Brazil as the most prominent contributors. The scientific program committee selected 57 papers for oral presentation, 16 of which were invited (including 2 plenary talks). Above this, the conference program included 295 poster presentations, with 3 invited posters. A vibrant commercial exhibition with 37 contributors took place during the conference, and an industrial session with 15 exhibitors was held one evening. The volume is divided into 10 chapters ranging from “Bulk growth” to “Device and application”. The reports demonstrate the technical and scientific advances in the related areas: 150 mm 4H-SiC wafers are now commercially available, a significant improvement of the carrier lifetime (up to 35 s) for n-type SiC epi-layers has been achieved, SiC diodes have a large market share in server and telecom power applications requiring the maximum efficiency, and a variety of 1-cm2, 15 kV class bipolar devices have been demonstrated, including PN Diodes, IGBTs and GTO. In general, the number of